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Hynix Introduces Industry's Fastest
185MHz 512Mb Mobile DDR SDRAM with ECC
March 15,2007 |
Seoul, March 15, 2007 - Hynix Semiconductor, Inc. ('Hynix' or 'the
Company', www.hynix.com) today announced it has developed the industry's
fastest 185MHz 512Megabit mobile DDR SDRAM with ECC (Error Correction
Code). The built in ECC, similar to that used in NAND Flash, ensures
data integrity while reducing current consumption by almost 50%.
At 185MHz clock speed, the fastest in the industry, a throughput of up
to 1.5Gbytes of data per second can be attained with a 32-bit I/O. The
ECC feature in this product allows for the extension of the refresh
interval which in turn significantly reduces power consumption.
Additionally, the 512Mb ECC Mobile DDR offers the traditional low power
features necessary for a wide range of mobile applications. These
features include reduced power supply voltage, temperature compensated
self refresh (TCSR), partial array self refresh (PASR), and deep power
down (DPD) modes.
Hynix's 512Mb ECC mobile DDR is manufactured on the Company's leading
edge 80nm process technology and is offered in JEDEC standard pin-out
and packages.
Mr. Kim Yong Tark, Hynix VP of Mobile Division says "As handheld
products such as mobile phones require higher density memory components,
the current consumption of mobile DRAMs has become a very critical issue
for OEMs. Hynix's ECC mobile DDR meets the system designers' need for
high density, data integrity and very low power consumption extending
battery life."
Hynix plans to assemble the 512Mb ECC mobile DDR with NAND flash and
offer a multi-chip package (MCP) or a package-on-package (POP) stack.
Mass production of the products is slated to begin at the second half of
2007, with samples scheduled for early third quarter. Preliminary
technical specification is available upon request.
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ECC11.jpg) 512Mb
mobile DDR SDRAM with speed of 185MHz fabricated on 80nm.
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