TSMC 40nm
Process Expected
in Second
Quarter 2008
1. TSMC to deliver
40nm process technology
-
DigiTimes
2. TSMC cuts its risk
while introducing 40-nm 'half node'
- EETimes
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1. TSMC to deliver
40nm process technology
Esther Lam, DIGITIMES
[Monday 24 March 2008]
Taiwan Semiconductor Manufacturing
Company (TSMC) has announced the
unveiling of the foundry's first
40nm manufacturing process
technology with first wafers
expected in the second quarter of
2008.
The new node supports a
performance-driven general purpose
(40G) technology and a
power-efficient low power (40LP)
technology. It features a full
design service package and a design
ecosystem that covers verified
third-party intellectual property
(IP), third-party electronic design
automation (EDA) tools, TSMC-generated
SPICE models and foundation IP,
noted the foundry.
The new 40nm node features
manufacturing innovations that
enable its LP and G processes to
deliver a 2.35 raw gate density
improvement of the 65nm offering.
The transition from 45nm to 40nm
low-power technology reduces power
scaling up to 15%, the company
highlighted.
TSMC has developed 40LP for
leakage-sensitive applications such
as wireless and portable devices and
its 40G variant targeting
performance applications including
CPU, GPU, games console, networking
and programmable gate array (FPGA)
designs and other high-performance
consumer devices. The 40nm footprint
is linearly shrunk and the SRAM
performance is fully maintained when
compared to its 45nm counterpart,
its SRAM cell size is now the
smallest in the industry at
0.242-micron squared.
A full range of mixed signal and RF
options accompany the 40G and 40LP
processes along with embedded DRAM,
to match the breath of applications
that can take advantage of the new
node's size and performance
combination.
The 40nm process employs a
combination of 193nm immersion
photolithography and extreme low-k
(ELK) material. The logic family
includes a low-power triple gate
oxide (LPG) option to support
high-performance wireless and
portable applications. Both the G
and the LP processes offer multiple
Vt core devices and 1.8V, 2.5V I/O
options to meet different product
requirements.
TSMC's CyberShuttle prototyping
service can be booked for 40nm
designs in April, June, August,
October and December 2008 and first
wave 45/40nm customers have already
used above 200 blocks on completed
multi-project wafer runs. The 40G
and LP processes will initially run
in TSMC's 12-inch wafer Fab 12 and
will be transferred to Fab 14 as
demand ramps.
___________________________________________________________________________________________________________________
2.TSMC cuts its risk while
introducing 40-nm 'half node'
Mark LaPedus
(03/24/2008 12:01 AM EDT)
URL: http://www.eetimes.com/showArticle.jhtml?articleID=206905147
Seeking to stay one step ahead of its rivals,
Taiwan Semiconductor Manufacturing Co. Ltd. has
unveiled what it claims is the industry's first
40-nanometer foundry process for leading-edge
designs. The process is an interim, "half node"
step toward the 32-nm process node, which TSMC
expects to ramp starting late next year.
Even as the the world's largest silicon foundry
pushes the envelope, it is quietly changing its
leading-edge process strategy, as its
customers--squeezed by soaring IC design and
manufacturing costs--slow their migration to
next-generation foundry processes.
The trend has been seen across the industry,
with negative implications for foundry margins
and growth.
Traditionally, TSMC (Hsinchu, Taiwan) would
install and ramp significant capacity for each
successive process node. But last year, during
the shift to 45 nm, TSMC discovered that the
anticipated "demand for leading-edge capacity
was not there," said Jim Hines, an analyst with
Gartner Inc. (Stamford, Conn.). Foundry
customers are "not migrating to the advanced
nodes as fast as before."
To lessen its risk, TSMC now ramps a "minimum"
amount of leading-edge capacity, sizing up
demand for a given process node before jumping
in with both feet, Hines said.
That prudent strategy helps TSMC sustain its
envious margins, but it also gives the
appearance that foundries are reluctant to
invest in leading-edge capacity. Indeed, at a
recent event, G. Dan Hutcheson, CEO of VLSI
Research Inc. (Santa Clara, Calif.), observed
that foundry providers "have fallen off Moore's
Law"; they are "backing away from aggressive
scaling."
The foundry model is far from broken, but the
business is rapidly changing. During the fabless
boom of the 1990s, foundry providers emerged and
grew at an astonishing rate. At the time, the
foundries were at least two to three technology
nodes behind the leading integrated device
manufacturers (IDMs). But the outsourcing
specialists were also able to obtain capital at
competitive rates.
Until recently, the leading-edge
foundries--Chartered Semiconductor
Manufacturing, TSMC, United Microelectronics
Corp. and, to a degree, IBM--built fab capacity
at brisk rates during both upturns and
downturns. That strategy, not surprisingly,
resulted in extreme oversupply/undersupply
cycles within the sector.
Today, most foundries push their processes to
the leading edge but adhere to a
more-conservative ramp schedule that builds out
capacity in line with tangible demand. The
exception to the rule appears to be China's
Semiconductor Manufacturing International Corp.,
which continues to expand capacity despite the
dip in the market.
"I think the foundry guys have the right
strategy. They are saying: 'Look, it's not all
about growth; it's about profitability.' So they
are going to build more to demand than
forecast," said Tom Caulfield, executive vice
president for sales, marketing and customer
service at chip-equipment supplier Novellus
Systems Inc. (San Jose, Calif.).
Runaway costs
Foundries and IDMs are also seeing another
ominous trend: IC design, photomask and process
costs continue to soar with each successive
technology node. But foundries must continue to
funnel R&D dollars into such emerging
technologies as high-k dielectrics and metal
gates.
On the bright side, even as leading-edge
customers prove slower on the uptake for
next-node processes, foundry providers continue
to see surprisingly high demand for older,
lower-cost process technologies at their 200-mm
fabs.
TSMC and its competitors have recognized the
bifurcation of the customer base and have acted
accordingly. Some observers nonetheless wonder
whether the foundries will prove nimble enough
to hit the market with the right processes when
the next upswing inevitably occurs.
TSMC, for its part, recently split its
operations into two groups, respectively
supporting its leading- and trailing-edge
technology efforts: the Advanced Technology
Business Organization and the Mainstream
Technology Business Organization.
For its advanced-technology customers, TSMC will
continue to push the process envelope. The
company unveiled its 45-nm process in 2007 and
has recently tipped details about its 32-nm
technology. But the latter process is not slated
to roll until the latter part of 2009. Hence the
new 40-nm process, which will serve leading-edge
requirements in the interim.
The offering is in fact two processes: 40G, a
general-purpose process, and 40LP, for low-power
requirements. The SRAM cell size for the
technology is said to be the smallest in the
industry, at 0.242 µm2. The 40-nm technology is
said to offer 2.35 times the gate density of
TSMC's 65-nm process. The transition from 45- to
40-nm low-power technology reduces power scaling
by up to 15 percent, TSMC said.
The foundry developed 40LP for leakage-sensitive
applications such as wireless and portable
devices. Its 40G variant targets performance
applications such as processors, graphic
processing units, game console ICs, networking
and FPGA designs.
"Our design flow can take a design started at 45
nm and target it toward the advantages of 40
nm," said John Wei, senior director of advanced
technology marketing at TSMC. "A lot of TSMC
development work has gone into ensuring that
this transition is transparent."
The 40-nm process employs 193-nm immersion
lithography and ultralow-k material. The logic
family includes a low-power, triple-gate oxide
(LPG) option to support high-performance
wireless and portable applications. Both the G
and the LP processes offer multiple-Vt core
devices and 1.8-V/2.5-V I/O options to meet
different product requirements.
TSMC will offer a multiproject wafer program at
the 40-nm half-node to reduce costs. The
processes support a range of third-party
intellectual property and EDA tools as well as
TSMC's own IP. First wafers are expected in the
second quarter.
This is not the foundry's first half-node
process step. It released its 65-nm process in
2006 and followed up with a 55-nm half-node
entry before rolling its 45-nm technology last
year.
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